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| Upcoming
Events |
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SEMICON Japan 2008
December 3-5, 2008
Chiba, Japan
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European Mask and Lithography Conference (EMLC) 2009
January 12-15, 2009
Dresden, Germany |
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SEMICON Korea 2009
January 20-22, 2009
Seoul, Korea |
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LithoVision 2009
February 22, 2009
San Jose Civic Auditorium and Tech Museum of Innovation |
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2009 SPIE Advanced Lithography
February 22-27, 2009
San Jose Convention Center |
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Mentor Graphics Users Meeting
February 23, 2009
San Jose Marriott |
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Dear Reader,
At Nikon, we know that the future of your company depends on partners who keep you on the leading edge. Toward that objective, we are very
pleased to bring you the latest edition of the Nikon eReview. This installment is highlighted with contributed articles by well-known
industry experts from JSR Micro and Mentor Graphics discussing advancements in resist technology and trends in computational lithography.
In addition, recent results from our joint double patterning program with CEA-LETI, and details on progress in immersion integration and EUV
optics development are featured. We sincerely hope you find the Nikon eReview informative, and encourage you to respond (npicom@nikon.com) with comments and suggestions on how we can
better serve our customers. |
 
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CEA-LETI Identifies Key Enablers for Introduction of DP Technology |
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At 32 nm and beyond, Double Patterning (DP) is the key enabling
technology for lithography applications. However, DP presents many additional challenges with regard to critical
dimension (CD) and overlay interactions between the two exposures used to pattern each layer. Nikon and CEA-LETI have
made excellent progress validating the DP error models proposed by Nikon, and recent investigations have yielded
valuable learning regarding topography effects on CDs. |
 Read
More |
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Double Patterning Single Etch Solutions from JSR |
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Double Patterning (DP) is the most likely lithography candidate
for the 32 nm half-pitch, and over the past several years innovative DP techniques to create pitch splitting
have been developed. While single etch processes are advantageous with regard to simplicity, cost, and throughput, they
present difficulties related to photoresist behavior. Chemical freeze is an elegant approach to resolve these DP single
etch challenges. |
| Read
More |
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Computational Lithography Technology Trends for 32 nm |
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With each successive technology generation, the computational
complexity associated with mask data preparation has increased tremendously. 32 nm manufacturing will feature the
introduction of double exposure techniques, and the simulation accuracy requirements and data volumes will pose a
significant challenge. The successful combination of a sophisticated polygon processing engine with highly accurate models
and cost-effective computational platforms is vital in overcoming these obstacles. |
| Read
More |
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NSR-S610C Immersion Scanners Meet Production Requirements for 45 nm and Beyond |
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Today, Nikon NSR-S610C immersion scanners (NA = 1.30) are being
used successfully in high-volume manufacturing in leading-edge facilities around the world. These systems are processing more
than 2000 wafers per day and delivering defectivity levels on par with dry lithography, while achieving overlay and aberration
performance that meets all production requirements for 45 nm applications and beyond. |
| Read
More |
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Lithography Basics: Extreme Ultraviolet Lithography (EUVL) Technology |
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In previous issues of the Nikon Review we discussed ways to expand
the resolution capability of Deep Ultraviolet (DUV) scanners. However, as we reach the fundamental limits of DUV lithography, it
is necessary to transition to Next-Generation Lithography. Today, the most promising candidate is Extreme Ultraviolet, or EUV,
lithography. In this article we’ll look at the promises and challenges associated with this solution. |
| Read
More |
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Advancements in EUV Optics Technology |
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Extreme Ultraviolet Lithography (EUVL) technology is the most
probable solution for lithography applications for the 22 nm half-pitch and beyond. However, there are significant challenges in
the areas of projection and illumination optics, as well as contamination control. Nikon is thoroughly engaged in EUVL
development, working closely with industry partners such as ASET, EUVA, and Selete to resolve the challenges presented by this
new way of imaging patterns. |
| View recent
Semiconductor International article to read more |
|
