Summer 2008
In This Edition
News
Skyhook Technology Eliminates Vibration and Optimizes Stepper Stability
Toshiba Using NSR-S610C Immersion Scanners for
45nm Manufacturing
Manufacturing
Selete Achieves Resolution of 30nm Features Using Nikon EUV1 System
IBM Expert Discusses Lithography System Trends
Featured Articles
Leading-edge Exposure Tools Must Control and Compensate for Thermal Aberrations Resulting from Today’s High Powered Laser Sources and Advanced Off-axis Illumination Techniques
OPC Models Incorporating Proprietary Scanner Parameters Increase OPC Modeling Accuracy and Minimize Modeling Time
Upcoming Events
SEMICON West 2008
July 15-17, 2008
Moscone Center
San Francisco, California
Visit Nikon in Booth 5947
SEMICON West Nikon Technology Luncheons
July 15 & 16, 2008
REGISTER NOW
SEMICON West
Hospitality Event
Hosted by Nikon and Synopsys
July 16, 2008
5th International Symposium on Immersion Lithography
September 22-25, 2008
The Hague, Netherlands
2008 International Symposium on Extreme Ultraviolet Lithography September 28 - October 1, 2008
Lake Tahoe, California
SEMICON Europa 2008
October 7-9, 2008
Stuttgart, Germany
Dear Reader,
At Nikon, our primary objective is to deliver the lithography solutions and services that enable you to stay ahead of your competitors—in whichever market you compete. As you read through this premiere edition of the Nikon eReview, you will find topics ranging from our new Skyhook lens design for i-line steppers to immersion and EUV technology. We’ll also discuss future lithography trends, and provide technical content from Toshiba, Selete, and IBM. We sincerely hope you find the Nikon eReview informative, and encourage you to respond to the Nikon eReview (npicom@nikon.com) with comments and suggestions on how we can better serve our customers.
News
Skyhook Technology Eliminates Vibration and Optimizes Stepper Stability
NSR-SF150 and SF155 i-line steppers use leading-edge Nikon Skyhook Technology, where the lens module is suspended from the stepper main body to eliminate the influence of ground and stage vibration on the lens and associated metrology, while optimized airflow and temperature control enhance system performance and stability.
Read More
Toshiba Using NSR-S610C Immersion Scanners for
45nm Manufacturing

Reporting on the current status of immersion for NAND and CMOS devices at LithoVision 2008, Soichi Inoue, Group Manager of Toshiba Corporation Lithography Process Development, announced that immersion lithography was sufficiently mature for the 45 nm half pitch, with Toshiba already producing 43 nm HP NAND flash devices using the NSR-S610C.
Read More
Selete Achieves Resolution of 30nm Features Using Nikon EUV1 System

While the industry is currently focused on immersion and 45 nm technology, Nikon is aggressively developing full-field EUV exposure tools for sub 32 nm applications. At the SPIE Advanced Lithography conference earlier this year, Ichiro Mori, Selete Director and General Manager of Lithography Research shared data from the Nikon EUV1 system demonstrating successful resolution of 30 nm L/S and 30 nm contact holes.
Read More
IBM Expert Discusses Lithography System Trends

Tim Farrell, Distinguished Engineer from the IBM Systems and Technology Group, presented his view on future lithography system trends at the 2008 LithoVision symposium earlier this year. For continued density scaling through 32 nm half pitch, there is a need for increased integration across tools, materials, mask fabrication, fab control systems, and computational processing. Additionally, co-optimization of circuit design with process technology will be required.
View Presentation
Leading-edge Exposure Tools Must Control and Compensate for Thermal Aberrations Resulting from Today’s High Powered Laser Sources and Advanced Off-axis Illumination Techniques

Each new generation of lithography exposure tools requires increased productivity and enhanced resolution capabilities. Higher powered lasers coupled with off-axis illumination strategies are used to satisfy these critical needs. However, the increased power through the projection lens and the light fluence concentrated locally in the lens pupil can lead to problematic thermal aberrations.
View recent Microlithography World magazine article to learn more
OPC Models Incorporating Proprietary Scanner Parameters Increase OPC Modeling Accuracy and Minimize Modeling Time

Ongoing device miniaturization, coupled with decreasing k1 factors, places stringent demands on optical lithography. These added requirements are reflected in the need for increasingly accurate lithography simulations used for OPC. In order to enhance simulation accuracy beyond current levels, it is necessary to consider the realistic physical conditions of the lithography/OPC simulation tools and their associated impacts on the resulting image.
View recent Solid State Technology magazine article to learn more
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