Deliver ghi-line capabilities with resolution below 2.3 µm
The need for varied exposure wavelength capabilities is becoming increasingly prevalent in MEMS, IC backend, and power device applications. Nikon recognizes this trend, and NES1W-ghi06 and NES2W-ghi06 steppers utilize broadband illumination to accommodate ghi-line resist processing and increase throughput. These systems employ 365-436 nm exposure wavelength to deliver resolution below 2.3 µm, with champion performance down to 1.7 µm. They fully satisfy the unique and ever-changing requirements for specialized applications.
Accommodate challenging process requirements with 22 µm depth of focus
NES1W-ghi06 and NES2W-ghi06 systems utilize a 0.13 numerical aperture projection lens design with 1.8x reduction that was developed to address the imaging challenges of power devices, as well as MEMS and backend IC layers. The NES1W-ghi06 and NES2W-ghi06 enable very large depth of focus —up to 22 µm, and their advanced autofocus systems provide die-by-die autofocus capabilities that further increase yield for these difficult processes.
Enhance mix and match with NSR steppers using 22 mm field size
The NES1W-ghi06 and NES2W-ghi06 makes use of advanced lens technology to enable the same 22 mm x 22 mm exposure field as traditional 5x reduction steppers, simplifying mix-and-match applications while boosting productivity. To further simply matching and reticle design, it is also possible to use the same alignment marks (FIA X/Y simultaneous marks) on these systems as on traditional NSR steppers.
Provide excellent overlay performance for large field
Problematic effects such as wafer deformation and process-induced shrinkage can be challenging for some applications; however, the NES1W-ghi06 and NES2W-ghi06 employ enhanced global alignment (EGA) to optimize overlay accuracy to 0.30 and 0.35 µm respectively for the large 22 mm field. EGA functions by utilizing multiple alignment marks across the wafer to ensure best fit alignment and thereby compensate for rotation issues or process-induced deformations. Pattern Matching Alignment capabilities are also available to provide increased flexibility for reticle design.
Support backside alignment to 0.8 µm
Customers may also choose to add on backside alignment functionality to enable precise alignment of 0.8 µm and below to marks located on the backside of the wafer surface. The newly developed backside alignment system incorporates both direct and infra-red alignment capabilities to optimize performance.
|Exposure Area (mm)||22 mm square to 17.9 (H) x 25.2 (V) mm
|Depth of Focus (µm)||22
|Overlay Accuracy (µm)||NES1W-ghi06: 0.30 NES2W-ghi06: 0.35
|Throughput||NES1W-ghi06: 150 mm – 87 WPH NES2W-ghi06: 200 mm – 48 WPH
|Wafer Size (mm)||NES1W-ghi06: ≤150 NES2W-ghi06: 150 and 200
Sample data from the NES1-h04 demonstrates BSA capabilities well below 0.8 µm.