As the semiconductor industry continues its never ending technology development by implementing new process generations every two years or less, Nikon continues to invest heavily in new product development.

In January 2006, Nikon shipped the world’s first hyper-NA immersion lithography system—the NSR-S609B.  This was followed by the NSR-S610C, the industry’s first 1.30 NA immersion scanner for 45 nm half-pitch production, in February 2007. Later that year, Nikon introduced the advanced NSR-S310F and NSR-S210D scanners. These “dry” lithography systems adopt the same platform as the NSR-S610C, using the Tandem Stage to provide superior performance with excellent cost of ownership.

Most recently, in February 2008, Nikon announced that they will provide an immersion scanner for double patterning (DP), based on the successful NSR-S610C platform, to customers in Q4 2008.  By enhancing the performance of the mature NSR-S610C immersion scanner to address the critical overlay requirements of double patterning, Nikon will deliver a low risk solution for DP development based on the proven Tandem Stage platform and proprietary Local Fill Technology.

Nikon is also fully engaged in EUV development, with the EUV1 already being used for 32 nm half-pitch customer R&D.  The EUV1 will be followed by the EUV2 for 32 nm device development.

Nikon is preparing to deliver the best lithography solutions for tomorrow by investing today in the development of immersion and high-index immersion lithography, double patterning, EUVL, and other advanced lithography solutions.