Preparing for future lithography needs is a
top priority at Nikon. As IC manufacturers search for optimal methods
for producing next-generation devices, Nikon is developing several advanced
approaches in parallel. This will ensure that the right production tools
are available when they are needed. Nikon solutions include immersion
lithography for 45 nm manufacturing and beyond, and we are developing double patterning (DP) and extreme ultraviolet
lithography (EUVL) for 32 nm applications and beyond.
EUVL
After double patterning with ArF immersion, Extreme Ultra-Violet Lithography (EUVL) is the front-running technology for next-generation lithography. Therefore, in addition to highly successful immersion scanner integration and double patterning programs, Nikon is aggressively engaged in developing EUVL systems for sub 32 nm applications.
Nikon EUV1 systems, with a numerical aperture (NA) of 0.25 and 1/4x reduction are already being used by customers for early process development. EUV1 systems will be followed by EUV2 tools for sub 32 nm device development, and production tool verification in 2010.
Double Exposure/Double Patterning (DE/DP)
Nikon has also been aggressively engaged in DP development, and in 2007
announced a Joint Development Program with CEA-Leti, focused on optical
lithography development for technology beyond 45 nm. This work has
been examining the potential of DE/DP for 32 nm semiconductor devices,
utilizing a leading-edge Nikon scanner located in the CEA-Leti Nanotec
300 research facility.
Most recently, in February 2008, Nikon announced that they will provide an immersion scanner for double patterning (DP), with DP tools available in 2009. Overlay accuracy <4.5 nm (M + 3σ) has already been achieved using the S610C, and the next generation immersion tool for single and double patterning applications will deliver overlay accuracy to meet the aggressive DP requirements. The tool will utilize the proven Tandem Stage platform and Nikon proprietary Local Fill Technology. |
