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Belmont, California – November 29, 2007 – Nikon Corporation has completed shipment of its NSR-S610C ArF immersion scanners to all of the five major regions of the world where leading-edge devices are manufactured. These areas include Japan, Taiwan, Korea, North America, and Europe. Immersion customers include memory and logic manufacturers, consisting of both existing Nikon equipment...
Belmont, California – October 18, 2007 – At the 4th International Symposium on Immersion Lithography held in Keystone, Colorado last week, Nikon Corporation and Toshiba Corporation announced 43 nm NAND Flash production would begin using the Nikon NSR-S610C ArF immersion scanner. The NSR-S610C (NA = 1.30), the world’s first 45 nm-capable immersion scanner, is targeted for...
Embedded Scanner Parameter Module Delivers Improved OPC Accuracy, Enhanced Model Predictability and Reduced Time to Silicon for Mutual Customers Belmont, Calif. and Mountain View, Calif. – September 18, 2007 – Nikon Corporation, a leading supplier of lithography equipment for microelectronics manufacturing, and Synopsys, Inc. (Nasdaq: SNPS), a world leader in semiconductor design and manufacturing software, today announced...
Nikon completes new suite of lithography solutions with two new scanners Belmont, California – July 11, 2007 – With a focus on leading-edge technology and high productivity, Nikon continues to introduce new lithography solutions to market at a rapid pace with two new DUV scanners – the NSR-S310F ArF scanner and the NSR-S210D KrF scanner. Both...
Belmont, California – February 28, 2007 – Nikon Corporation has shipped the world’s first immersion lithography system capable of 45 nm production. The NSR-S610C, an ArF immersion scanner with the industry’s highest projection lens NA of 1.30, shipped to a major IC manufacturer. The system is targeted for mass production of 45 nm devices and can...
Belmont, California – February 27, 2007 – Nikon Corporation announced today a Joint Development Program with CEA-Leti, one of Europe’s leading microelectronics research centers focused on optical lithography development for technology beyond 45 nm. The work will examine the potential of Double Exposure and Double Patterning for 32 nm semiconductor devices, and will utilize a leading-edge...
Major Taiwanese Memory Manufacturer Selects Nikon BELMONT, California — December 14, 2006 — Nikon Precision announced its NSR-S610C ArF immersion scanner has been selected by Powerchip Semiconductor Corporation as the leading edge tool for its 50 nm NAND flash process. The tool will be installed in Powerchip’s fab in Hsinchu, Taiwan. This system was selected over...
New Stepper Reduces Costs for Sub-Critical Layers BELMONT, California — November 20, 2006 — Nikon continues its focus on high productivity lithography solutions with the introduction of the NSR-SF150, a scan field i-line stepper with ultra high throughput and extremely low cost of ownership. Throughput has been increased by more than 50% to 180 wafers per...
Improved OPC model accuracy and reduced time to market are key benefits BELMONT, California., October 10, 2006 — Nikon Corporation, a leading supplier of lithography equipment for microelectronics manufacturing, and Brion Technologies Inc., the leader in Lithography-Driven Design & Manufacturing™, today announced a partnership to deliver lithography enabled DFM applications aimed at providing globally optimized...
Solutions target improved lithography modeling accuracy, reduced time to silicon, and improved manufacturing yield BELMONT, Calif., – September 20, 2006 – Nikon Corporation, a leading supplier of lithography equipment for microelectronics manufacturing, and Synopsys, Inc. (Nasdaq:SNPS), a world leader in semiconductor design software today announced that they are collaborating on the development and delivery of...
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