Delivers excellent immersion performance and productivity with the proven Streamlign platform
High volume manufacturing of 14 nm processes’ critical layers requires ArF immersion scanners and multiple patterning. To minimize costs for chipmakers, exceptional scanner overlay and imaging matching capabilities are needed to ensure high yield and optimized productivity. The NSR-S622D employs the well-known Streamlign platform, incorporating projection lens, autofocus, and other system advancements to deliver superior mix-and-match overlay with high throughput. The S622D also supports the Nikon Intelligent Illuminator Unit (IIU), as well as a number of software solutions to enhance scanner imaging capabilities. The advanced NSR-S622D fully satisfies aggressive 14 nm technology node requirements.
Mix-and-match overlay ≤ 3.5 nm increases yield and manufacturing flexibility
The NSR-S622D utilizes the proven Bird’s Eye Control system, which uses laser encoders along with conventional interferometers to accurately determine wafer position time after time. The S622D also incorporates a grating plate structure that minimizes linearity variation across the wafer stage area to optimize stability, and employs a Reticle Cooling system that minimizes thermal deformation of the reticle. In addition, a Wafer Table Temperature Control System is used for added temperature stabilization during exposure. Together these comprehensive systems enable the S622D to deliver single machine overlay ≤ 2 nm.
These capabilities are combined with enhancements to lens performance, autofocus, and other system advancements to enable S622D mix-and-match overlay (MMO) ≤ 3.5 nm to satisfy 14 nm requirements. Mix-and-match overlay performance demonstrated using two S622D systems showed total overlay error across the lot, as well as across three lots below 3 nm (Avg. + 3σ).
State-of-the-art illuminator and optical control capabilities satisfy critical imaging requirements
The S622D supports the Nikon Intelligent Illuminator Unit, which provides freeform and parametric sources. It delivers high pupil fidelity with a high degree of pupilgram freedom (DPF) (10,000 to 100,000). This increases accuracy and homogeneity in the generated pupilgram, which creates patterns much closer to the designed target.
The NSR-S622D is also compatible with optional Nikon OPE Master software. OPE Master optimizes imaging parameters to minimize the OPE error between a reference scanner and the one to be adjusted. The user can input pattern information, exposed OPE results, and optimizing parameters for the OPE matching. The S622D works in tandem with OPE Master software to successfully minimize optical proximity errors across the toolset.
1.35 NA lens with sophisticated thermal aberration control optimizes CD uniformity
The NSR-S622D incorporates a 1.35 numerical aperture lens to support 14 nm applications. Advanced lens materials are utilized to reduce thermal absorption, as well as to ensure that aberration and local flare levels are extremely low. S622D lens distortion was reduced by almost 40% compared to the previous generation scanner, with dynamic distortion single machine and matching results both ≤ 1.5 nm (3σ). Additionally, the Quick Reflex deformable mirror system enables on-the-fly astigmatism control, while the Reticle Bending function enables correction for curved reticles and any residual field curvature, to further enhance imaging performance. Coupled with the autofocus system improvements, the S622D delivers ultra-fine CD uniformity control for critical processes.
Enhances affordability with throughput ≥ 200 wafers per hour
Affordability is a key challenge for immersion multiple patterning, and S622D throughput is a critical factor in making these processes cost effective for manufacturing. The NSR-S622D wafer stage uses optimized scan speed and acceleration capabilities to reduce exposure time. In addition, the established Stream Alignment wafer mapping system utilizes multiple alignment microscopes (Five-Eye FIA) and a wide area autofocus sensor (Straight Line Autofocus) that spans the wafer to pre-scan the substrate during loading−dramatically reducing overhead time. Together, these innovations enable throughput ≥ 200 wafers per hour (WPH) using 125 exposure shots and ≥ 220 WPH with 96 shots.
|Exposure Area (mm)||26 x 33|
|Resolution (nm)||≤ 38|
|Single Machine Overlay (nm)||≤ 2|
|Mix-and-Match Overlay (nm)||≤ 3.5|
|300 mm (125 exp fields)||≥ 200|
|Wafer Size (mm)||300|