Satisfy fab specific objectives with diverse product capabilities
These popular Mini Steppers are well suited for a variety of MEMS and LED applications, delivering overlay performance and throughput to meet unique fab objectives and product-specific requirements. Customers may choose to add on backside alignment (BSA) functionality to enable precise alignment to marks located on the backside of the wafer surface. The newly developed backside alignment system incorporates both direct and infra-red alignment capabilities. The NES1W-h04/NES1W-h04A and NES2W-h04 enable BSA below 0.8 µm.

Enable resolution below 2 µm with increased lens NAs
Some of today’s Mini Stepper applications require increased lens numerical apertures (NA) and the NES1W-h04/NES2W-h04 utilize 0.16 NAs and deliver resolution ≤ 2 µm. To satisfy even more challenging imaging requirements, the NES1W-h04A has a 0.20 NA to enable 1.6 µm resolution. 

Deliver large depth of focus for enhanced yield
These Mini Steppers utilize projection lenses with 2.5x reduction that were specifically designed to address the unique process challenges presented by MEMS and LED applications. They deliver large depth of focus, while their advanced autofocus systems provide die-by-die autofocus capabilities that further increase yield for these difficult processes.

Provide optimal productivity and comply with global safety specifications
The high throughput NES1W-h04/NES1W-h04A Mini Steppers can process 70 wafers per hour (57 exposure shots at 15 mm step pitch), and provide great flexibility with support for wafer sizes up to 150 mm. The NES2W-h04 can process ≥ 35 200 mm wafers per hour. In addition, these steppers reduce reticle costs with the Dual Exposure Area for a Single Reticle function, which makes it possible to utilize two separate exposure patterns on a single reticle by rotating the reticle according to programmable settings. Reticle blinds are then used to control the actual exposure area. These systems also minimize total fab costs with total fab footprints below 3.3 m2. In addition to delivering these critical productivity benefits to ensure low cost of ownership for manufacturers, these stepper also satisfy global safety compliance specifications.

  • Wavelength (nm)
  • Lens-NA
  • Exposure Area (mm)
  • Reduction Ratio
  • Resolution (µm)
  • Depth of Focus (µm)
  • Overlay Accuracy (µm)
  • Throughput
  • Wafer Size (mm)
  • 405
  • 0.16 (NES1W-h04A: 0.20)
  • 15 mm square to 11.23 (H) x 18 (V) mm
  • 1/2.5
  • 2.0 (NES1W-h04A: 1.6)
  • 12.0 (NES1W-h04A: 8)
  • NES1W-h04/NES1W-h04A: 0.30 NES2W-h04: 0.35
  • NES1W-h04/NES1W-h04A: 150 mm -70 WPH NES2W-h04: 200 mm - 35 WPH
  • NES1W-h04/NES1W-h04A: ≤ 150 NES2W-h04: 150 and 200

Excellent Imaging with 0.16 Numerical Aperture; σ = 1.0; 1.5 µm L/S x 5 Lines and Isolated Positive and Negative Lines

chart_nes2-h04

The proven 0.16 NA h04 lens design easily delivers resolution capabilities below 2 µm to satisfy customers' most critical imaging requirements.