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October 18, 2007
Belmont, California – October 18, 2007 – At the 4th International Symposium on Immersion Lithography held in Keystone, Colorado last week, Nikon Corporation and Toshiba Corporation announced 43 nm NAND Flash production would begin using the Nikon NSR-S610C ArF immersion scanner. The NSR-S610C (NA = 1.30), the world’s first 45 nm-capable immersion scanner, is targeted for...