Provides world-class device patterning and productivity for diverse cutting-edge semiconductor manufacturing processes including 3D-ICs
As the digital transformation accelerates, high-performance semiconductors that can process and transmit larger amounts of data more quickly are becoming increasingly critical. The key enablers in technology innovation for leading-edge semiconductor performance are circuit pattern miniaturization as well as 3D semiconductor device structures. ArF immersion scanners are essential for both of these manufacturing processes.
When compared to conventional semiconductor processing, wafer warpage and distortions are more likely to occur during 3D semiconductor manufacturing. This necessitates even more advanced scanner correction and compensation capabilities than ever before. The NSR-S636E is the optimum patterning solution for the many diverse structures used in cutting-edge semiconductor manufacturing.
Delivers optimal on-product overlay performance with advanced compensation for wafer warpage and distortions
The NSR-S636E ArF immersion scanner utilizes an enhanced inline Alignment Station (iAS) that performs sophisticated wafer multipoint measurement before exposure. This innovative system delivers next-level overlay accuracy using high-precision measurement and extensive wafer warpage and distortion correction capabilities, all while maintaining maximum scanner throughput. Advanced measurement and compensation capabilities improve process robustness and provide exceptional performance and productivity across diverse production processes including 3D-ICs where wafer deformation can easily occur.
1.35 NA lens with sophisticated thermal aberration control enhances CD uniformity
The NSR-S636E incorporates a 1.35 numerical aperture lens and advanced lens materials are utilized to reduce thermal absorption. This also ensures that aberration and local flare levels are extremely low. Coupled with the advanced Straight Line Autofocus system, the S636E delivers optimal CD uniformity control for advanced processes.
Maximizes overall scanner productivity and enables ultra-high throughput up to 280 wafers per hour
In addition, through comprehensive improvements in throughput and daily productivity optimization, the NSR-S636E ArF immersion scanner boosts overall scanner output by 10-15% compared to current models. This is the highest level of productivity across the entire history of Nikon semiconductor lithography systems and enables optimized efficiency in cutting-edge semiconductor device production.
Nikon continues to provide invaluable solutions like the NSR-S636E for advanced IC production and to support the development of our digital society. We are committed to continuing to push the limits of photolithography through industry-leading solutions such as the S636E to support our customers’ manufacturing objectives for many years to come.
|Exposure Area (mm)
|26 x 33
|Mix-and-Match Overlay (nm)
|300 mm (96 exp fields)
|Wafer Size (mm)