In 2006, the NSR-S609B immersion scanner marked a major milestone in the Nikon immersion program. Over the past fifteen years we have maintained an aggressive roadmap delivering innovative scanner solutions to satisfy the increasingly stringent requirements for immersion and multiple patterning applications. During that time, Nikon developed the NSR-S620D, based on the pioneering Streamlign platform, to not only enable double patterning lithography at 32 nm, but to provide extendibility to next-generation applications. This was followed by the evolutionary NSR-S621D, S622D, S630D, and S631E immersion scanners, and most recently the NSR-S625E immersion scanner has been announced.
It is real-world, on-product performance that is vital to chipmakers. The NSR-S635E immersion scanner ensures world-class device patterning and optimum fab productivity to fully satisfy cutting-edge semiconductor manufacturing requirements. The pioneering inline Alignment Station (iAS) is a high speed, extremely accurate wafer pre-measurement module integrated between the coater/developer and NSR-S635E scanners. iAS provides feed forward alignment results for all shots on every wafer, delivering better alignment and overlay—with no impact on throughput. iAS capabilities can also be extended to other scanners in the fab with the Litho Booster Standalone Alignment Station. In addition to delivering shot-by-shot feed forward corrections, Litho Booster provides an open platform for expanded overlay, autofocus, and process control solutions as well.
In 2006, the NSR-S609B immersion scanner marked a major milestone in the Nikon immersion program. Over the past fifteen years we have maintained an aggressive roadmap delivering innovative scanner solutions to satisfy the increasingly stringent requirements for immersion and multiple patterning applications. During that time, Nikon developed the NSR-S620D, based on the pioneering Streamlign platform, to not only enable double patterning lithography at 32 nm, but to provide extendibility to next-generation applications. This was followed by the evolutionary NSR-S621D, S622D, S630D, and S631E immersion scanners for applications down to the 7 nm node and beyond.
It is real-world, on-product performance that is vital to chipmakers. The NSR-S635E is the industry’s most advanced scanner for aggressive multiple patterning processes. It ensures world-class device patterning and optimum fab productivity to fully satisfy real-world 5 nm node requirements and beyond. The pioneering inline Alignment Station (iAS) is a high speed, extremely accurate wafer pre-measurement module integrated between the coater/developer and NSR-S635E scanners. iAS provides feed forward alignment results for all shots on every wafer, delivering better alignment and overlay—with no impact on throughput. iAS capabilities can also be extended to other scanners in the fab with the Litho Booster Standalone Alignment Station. In addition to delivering shot-by-shot feed forward corrections, Litho Booster provides an open platform for expanded overlay, autofocus, and process control solutions as well.
Provides world-class device patterning and productivity for cutting-edge semiconductor manufacturing.
High accuracy immersion scanner satisfying 14 nm technology node requirements.
Standalone Alignment Station delivering shot-by-shot feed forward corrections to maximize yield.
Delivers optimum performance and productivity for middle critical immersion layers.
