Delivers optimum performance and productivity for middle critical immersion layers
Semiconductors today are being used in a multitude of applications, and the performance and productivity requirements for different devices and chip makers vary greatly. Nikon works closely with customers around the world to continually deliver the best lithography solutions to satisfy their specific process and productivity objectives. Most recently, Nikon has announced the newly developed NSR-S625E ArF immersion scanner.
The NSR-S625E is the successor to the well-known NSR-S622D 193 nm immersion scanner, which has been utilized in high-volume semiconductor manufacturing for close to a decade. Like the S622D, the S625E employs the proven Streamlign platform and Stream Alignment, while also delivering throughput that is approximately 1.3x higher than that of the NSR-S622D.
Mix-and-match overlay ≤ 2.5 nm increases yield and manufacturing flexibility
The NSR-S625E features the well-established Bird’s Eye Control system, which uses laser encoders along with conventional interferometers to accurately determine wafer position time after time. The S625E also incorporates the sophisticated inline Alignment Station (iAS). iAS is a high-speed, extremely accurate wafer pre-measurement module integrated between the coater/developer and the S625E. iAS provides feed-forward alignment results for all shots on every wafer, delivering better alignment and overlay—with no impact on throughput. This effective combination enables the S625E to deliver single machine overlay (SMO) ≤ 1.7 nm and mix-and-match overlay (MMO) ≤ 2.5 nm to fully satisfy middle critical ArF immersion layer requirements.
Maximizes manufacturing productivity with throughput ≥ 280 wafers per hour
Fab productivity and overall efficiency are key challenges for semiconductor device makers. Through the successful pairing of exceptional immersion system throughput ≥280 wafers per hour (WPH) and industry-leading scanner operational stability, the NSR-S625E will maximize manufacturing productivity for a wide range of semiconductor devices.
1.35 NA lens with sophisticated thermal aberration control optimizes CD uniformity
The NSR-S625E incorporates a 1.35 numerical aperture lens, and advanced lens materials are utilized to reduce thermal absorption, as well as to ensure that aberration and local flare levels are extremely low. Coupled with the advanced Straight Line Autofocus system, the S625E delivers optimal CD uniformity control for middle level critical processes.
Nikon is committed to providing innovative lithography solutions like the NSR-S625E ArF immersion scanner that enable customers to advance semiconductor manufacturing and support the digital transformation.
|Exposure Area (mm)
|26 x 33
|Mix-and-Match Overlay (nm)
|300 mm (96 exp fields)
|Wafer Size (mm)