Nikon Precision | USA & Europe | Nikon Global Site


February 27, 2007
Belmont, California – February 27, 2007 – Nikon Corporation announced today a Joint Development Program with CEA-Leti, one of Europe’s leading microelectronics research centers focused on optical lithography development for technology beyond 45 nm. The work will examine the potential of Double Exposure and Double Patterning for 32 nm semiconductor devices, and will utilize a leading-edge...